Matthias Widmann home of Coherence Times

Doctoral Dissertation

Character Table for the C₃ᵥ Symmetry Group

Character Table for the C3vC_{3v} Symmetry Group

Table A.1:
C3vC_{3v}E2C32C_32σv2\sigma_{v}lin., rot.
A1A_1111z
A2A_211−1RzR_z
E2−10(x,y)(x,y) (Rx,Ry)(R_x, R_y)

Table: Character table for point group C3vC_{3v}.

A review table with the expected charge states for both VSiV_{\text{Si}} and VCV_{\text{C}}, considering only EFE_F, and optical ionization. Referenced in the main text in Section charge-state-control.

Charge States and Ionization

The following table is based on discussion with S. Lee and C. Bonato, table was created by C. Bonato.

Charge state conversion table for the silicon vacancy and carbon vacancy.

Figure A.1: Charge state conversion table for the silicon vacancy and carbon vacancy. Referenced in Section charge-state-control. References: a) (Trinh et al., 2013), b) M. Bockstedte et al. unpublished, c) M. Bockstedte et al. unpublished, d) (Bockstedte et al., 2010), e) (Son et al., 2012)

References

Bockstedte, M., Marini, A., Pankratov, O., & Rubio, A. (2010). Many-Body Effects in the Excitation Spectrum of a Defect in SiC. Phys. Rev. Lett., 105(2), 026401.
Son, N. T., Trinh, X. T., Lévlie, L. S., Svensson, B. G., Kawahara, K., Suda, J., Kimoto, T., Umeda, T., Isoya, J., Makino, T., Ohshima, T., & Janzén, E. (2012). Negative-U system of carbon vacancy in 4H-SiC. Physical Review Letters, 109(18), 23–27.
Trinh, X. T., Szász, K., Hornos, T., Kawahara, K., Suda, J., Kimoto, T., Gali, A., Janzén, E., & Son, N. T. (2013). Negative- U carbon vacancy in 4 H -SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site. Physical Review B - Condensed Matter and Materials Physics, 88(23), 1–13.