Research · Quantum Defects
Spin defects in silicon carbide
Silicon carbide (SiC) hosts atomic point defects whose electron spins can be initialised, coherently controlled, and read out optically at and above room temperature. Among them, the silicon-vacancy centre combines long spin coherence with bright, telecom-adjacent emission in a wafer-scale, industrially mature semiconductor — which is what makes it interesting beyond the lab: the same material platform already used in power electronics can carry quantum-grade spin qubits and single-photon sources.
This research track concerns how those defects are created, charge-state-stabilised, coherently driven, and integrated into scalable photonic structures and electrically driven devices. The full treatment lives in the doctoral dissertation.